page 1 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary overview the rambus rimm? module is a general purpose high- performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. the rambus rimm module consists of 128mb/144mb direct rambus dram devices. these are extremely high- speed cmos drams organized as 8m words by 16 or 18 bits. the use of rambus signaling level (rsl) technology permits 600mhz, 711mhz or 800mhz transfer rates while using conventional system and board design technologies. rdram devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per 16 bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. the separate control and data buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-banks architecture supports up to four simultaneous transactions per device. features h igh speed 800, 711 and 600mhz rdram storage 184 edge connector pads with 1mm pad spacing maximum module pcb size : 133.5mm x 31.75mm x 1.37mm (5.21 ? x 1.25 ? x 0.0 5 ? ) each rdram has 32 banks, for a total of 512, 384, 256, 192, or 128 banks on each 256/288mb, 192/216mb, 128/144mb, 96/108mb, or 64/72mb module respectively gold plated edge connector pad contacts serial presence detect(spd) support operates from a 2.5 volt supply ( 5%) low power and powerdown self refresh modes separate row and column buses for higher efficiency m- bga package type key timing parameters/part numbers the following table lists the frequency and latency bins available from rimm modules. an optional ? s? designator instead of ?r? followed by ? hyphen(-)? indicates low power modules. table 1. part number by freq. & latency form factor the rambus rimm modules are offered in a 184-pad 1mm edge connector pad pitch form factor suitable for 184 contact rimm connectors. the rimm module is suitable for desktop and other system applications. organization speed part number a a. -s designator indicates module with lower self-refresh current. bin i/o freq. mhz t rac (row access time) ns 32m x 16/18 -rg6 600 53 kmmr16/18r84ac1-rg6 -rk7 711 45 kmmr16/18r84ac1-rk7 -rk8 800 45 kmmr16/18r84ac1-rk8 48m x 16/18 -rg6 600 53 kmmr16/18r86ac1-rg6 -rk7 711 45 kmmr16/18r86ac1-rk7 -rk8 800 45 kmmr16/18r86ac1-rk8 64m x 16/18 -rg6 600 53 kmmr16/18r88ac1-rg6 -rk7 711 45 kmmr16/18r88ac1-rk7 -rk8 800 45 kmmr16/18r88ac1-rk8 96m x 16/18 -rg6 600 53 kmmr16/18r8cac1-rg6 -rk7 711 45 kmmr16/18r8cac1-rk7 -rk8 800 45 kmmr16/18r8cac1-rk8 128m x 16/18 -rg6 600 53 kmmr16/18r8gac1-rg6 -rk7 711 45 kmmr16/18r8gac1-rk7 -rk8 800 45 kmmr16/18r8gac1-rk8 figure 1: rambus rimm module without heat spreader note: on two sided modules, rdrams are also installed on bottem side of pcb.
page 2 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary table 2. module pad number and signal names pin pin name pin pin name pin pin name pin pin name a1 gnd b1 gnd a47 nc b47 nc a2 ldqa8 b2 ldqa7 a48 nc b48 nc a3 gnd b3 gnd a49 nc b49 nc a4 ldqa6 b4 ldqa5 a50 nc b50 nc a5 gnd b5 gnd a51 vref b51 vref a6 ldqa4 b6 ldqa3 a52 gnd b52 gnd a7 gnd b7 gnd a53 scl b53 sa0 a8 ldqa2 b8 ldqa1 a54 vdd b54 vdd a9 gnd b9 gnd a55 sda b55 sa1 a10 ldqa0 b10 lcfm a56 svdd b56 svdd a11 gnd b11 gnd a57 swp b57 sa2 a12 lctmn b12 lcfmn a58 vdd b58 vdd a13 gnd b13 gnd a59 rsck b59 rcmd a14 lctm b14 nc a60 gnd b60 gnd a15 gnd b15 gnd a61 rdqb7 b61 rdqb8 a16 nc b16 lrow2 a62 gnd b62 gnd a17 gnd b17 gnd a63 rdqb5 b63 rdqb6 a18 lrow1 b18 lrow0 a64 gnd b64 gnd a19 gnd b19 gnd a65 rdqb3 b65 rdqb4 a20 lcol4 b20 lcol3 a66 gnd b66 gnd a21 gnd b21 gnd a67 rdqb1 b67 rdqb2 a22 lcol2 b22 lcol1 a68 gnd b68 gnd a23 gnd b23 gnd a69 rcol0 b69 rdqb0 a24 lcol0 b24 ldqb0 a70 gnd b70 gnd a25 gnd b25 gnd a71 rcol2 b71 rcol1 a26 ldqb1 b26 ldqb2 a72 gnd b72 gnd a27 gnd b27 gnd a73 rcol4 b73 rcol3 a28 ldqb3 b28 ldqb4 a74 gnd b74 gnd a29 gnd b29 gnd a75 rrow1 b75 rrow0 a30 ldqb5 b30 ldqb6 a76 gnd b76 gnd a31 gnd b31 gnd a77 nc b77 rrow2 a32 ldqb7 b32 ldqb8 a78 gnd b78 gnd a33 gnd b33 gnd a79 rctm b79 nc a34 lsck b34 lcmd a80 gnd b80 gnd a35 vcmos b35 vcmos a81 rctmn b81 rcfmn a36 sout b36 sin a82 gnd b82 gnd a37 vcmos b37 vcmos a83 rdqa0 b83 rcfm a38 nc b38 nc a84 gnd b84 gnd a39 gnd b39 gnd a85 rdqa2 b85 rdqa1 a40 nc b40 nc a86 gnd b86 gnd a41 vdd b41 vdd a87 rdqa4 b87 rdqa3 a42 vdd b42 vdd a88 gnd b88 gnd a43 nc b43 nc a89 rdqa6 b89 rdqa5 a44 nc b44 nc a90 gnd b90 gnd a45 nc b45 nc a91 rdqa8 b91 rdqa7 a46 nc b46 nc a92 gnd b92 gnd
page 3 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary table 3. module connector pad description signal pins i/o type description gnd a1, a3, a5, a7, a9, a11, a13, a15, a17, a19, a21, a23, a25, a27, a29, a31, a33, a39, a52, a60, a62, a64, a66, a68, a70, a72, a74, a76, a78, a80, a82, a84, a86, a88, a90, a92, b1, b3, b5, b7, b9, b11, b13, b15, b17, b19, b21, b23, b25, b27, b29, b31, b33, b39, b52, b60, b62, b64, b66, b68, b70, b72, b74, b76, b78, b80, b82, b84, b86, b88, b90, b92 ground reference for rdram core and interface. 72 pcb connector pads. lcfm b10 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. lcfmn b12 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. lcmd b34 i v cmos serial command used to read from and write to the con- trol registers. also used for power management. lcol4.. lcol0 a20, b20, a22, b22, a24 i rsl column bus. 5-bit bus containing control and address information for column accesses. lctm a14 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. lctmn a12 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. ldqa8.. ldqa0 a2, b2, a4, b4, a6, b6, a8, b8, a10 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqa8 is non-functional on modules with x16 rdram devices ldqb8.. ldqb0 b32, a32, b30, a30, b28, a28, b26, a26, b24 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqb8 is non-functional on modules with x16 rdram devices. lrow2.. lrow0 b16, a18, b18 i rsl row bus. 3-bit bus containing control and address infor- mation for row accesses. lsck a34 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. nc a16, b14, a38, b38, a40, b40, a43, b43, a44, b44, a45, b45, a46, b46, a47, b47, a48, b48, a49, b49, a50, b50, a77, b79 these pads are not connected. these 24 connector pads are reserved for future use. rcfm b83 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. rcfmn b81 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. rcmd b59 i v cmos serial command input. pin used to read from and write to the control registers. also used for power manage- ment. rcol4.. rcol0 a73, b73, a71, b71, a69 i rsl column bus. 5-bit bus containing control and address information for column accesses.
page 4 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary rctm a79 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. rctmn a81 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. rdqa8.. rdqa0 a91, b91, a89, b89, a87, b87, a85, b85, a83 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqa8 is non-functional on modules x16 rdram devices. rdqb8.. rdqb0 b61, a61, b63, a63, b65, a65, b67, a67, b69 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqb8 is non-functional on modules x16 rdram devices. rrow2.. rrow0 b77, a75, b75 i rsl row bus. 3-bit bus containing control and address infor- mation for row accesses. rsck a59 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. sa0 b53 i sv dd serial presence detect address 0. sa1 b55 i sv dd serial presence detect address 1. sa2 b57 i sv dd serial presence detect address 2. scl a53 i sv dd serial presence detect clock. sda a55 i/o sv dd serial presence detect data (open collector i/o). sin b36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio0 of the first rdram on the module. sout a36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio1 of the last rdram on the module. sv dd a56, b56 spd voltage. used for signals scl, sda, swe, sa0, sa1 and sa2. swp a57 i sv dd serial presence detect write protect (active high). when low, the spd can be written as well as read. v cmos a35, b35, a37, b37 cmos i/o voltage. used for signals cmd, sck, sin, sout. vdd a41, a42, a54, a58, b41, b42, b54, b58 supply voltage for the rdram core and interface logic. vref a51, b51 logic threshold reference voltage for rsl signals. signal pins i/o type description
page 5 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) r d q a 8 r d q a 7 r d q a 6 r d q a 5 r d q a 4 r d q a 3 r d q a 2 r d q a 1 r d q a 0 r c f m r c f m n r c t m r c t m n r r o w 2 r r o w 1 r r o w 0 r c o l 4 r c o l 3 r c o l 2 r c o l 1 r c o l 0 r d q b 0 r d q b 1 r d q b 2 r d q b 3 r d q b 4 r d q b 5 r d q b 6 r d q b 7 r d q b 8 l d q a 8 l d q a 7 l d q a 6 l d q a 5 l d q a 4 l d q a 3 l d q a 2 l d q a 1 l d q a 0 l c f m l c f m n l c t m l c t m n l r o w 2 l r o w 1 l r o w 0 l c o l 4 l c o l 3 l c o l 2 l c o l 1 l c o l 0 l d q b 0 l d q b 1 l d q b 2 l d q b 3 l d q b 4 l d q b 5 l d q b 6 l d q b 7 l d q b 8 u1 s i n l s c k l c m d v r e f s o u t r s c k r c m d vdd g nd 2 per rdram scl sda a0 a1 scl sa0 sa1 sda serial presence detect note 1. rambus channel signals form a loop through the rimm module , with the exception of the sio chain. d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) v ref g nd 1 p er 2 rdram s v cmos g nd 1 p er 2 rdram s a2 sa 2 wp swp u0 vcc s v dd 0.1 m f 0.1 m f 0.1 m f sv dd g nd 0.1 m f plus one near connector 47k w u2 u3 un note 2. see serial presence detection specification for information on the spd device and its contents. module capacity n 256/288mb 16 192/216mb 12 128/144mb 8 96/108mb 6 64/72mb 4 figure 2: rimm module functional diagram
page 6 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary absolute maximum ratings dc recommended electrical conditions a. the table below shows the number of 128mb or 144mb rdram devices contained in a rimm module of listed memory storage capacity. symbol parameter min max unit v i,abs voltage applied to any rsl or cmos singnal pad with respect to gnd - 0.3 v dd + 0.3 v v dd,abs voltage on vdd with respect to gnd - 0.5 v dd + 1.0 v t store storage temperature - 50 100 c symbol parameter and conditions min max unit v dd supply voltage 2.50 - 0.13 2.50 + 0.13 v v cmos cmos i/o power supply at pad for 2.5v controllers: cmos i/o power supply at pad for 1.8v controllers: 2.5 - 0.13 1.8 - 0.1 2.5 + 0.25 1.8 + 0.2 v v v ref reference voltage 1.4 - 0.2 1.4 + 0.2 v v il rsl input low voltage v ref - 0.5 v ref - 0.2 v v ih rsl input high voltage v ref + 0.2 v ref + 0.5 v v il,cmos cmos input low voltage - 0.3 0.5v cmos - 0.25 v v ih,cmos cmos input high voltage 0.5v cmos + 0.25 v cmos + 0.7 v v ol,cmos cmos output low voltage @ i ol,cmos = 1ma 0.3 v v oh,cmos cmos output high voltage @ i oh,cmos = -0.25ma v cmos - 0.3 v i ref v ref current @ v ref,max -10 x no. rdrams a 10 x no. rdrams a m a i sck,cmd cmos input leakage current @ (0 v cmos v dd ) -10 x no. rdrams a 10 x no. rdrams a m a i sin,sout cmos input leakage current @ (0 v cmos v dd ) -10.0 10.0 m a rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb no. of 128mb or 144mb rdram devices 16 12 8 6 4
page 7 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary ac electrical specifications a. table below lists parameters and specifications for different storage capacity rimm modules that use 128mb or 144mb rdram dev ices. b. average clock delay is defined as the average delay from finger to finger of all rsl clock nets (ctm, ctmn, cfm and cfmn). ac electrical specifications for rimm modules symbol parameter and conditions min typ max unit z module impedance 25.2 28 30.8 w t pd propagation delay, all rsl signals - see table a ns d t pd propagation delay variation of rsl signals with respect to an average clock delay b -10 10 ps d t pd-cmos propagation delay variation of sck and cmd signals with respect to an average clock delay b -100 100 ps v a /v in attenuation limit see table a % v xf /v in forward crosstalk coefficient (300ps input rise time @ 20%-80%) see table a % v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%-80%) see table a % symbol rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb unit no. of 128/144mb rdrams 16 12 8 6 4 parameter and condition for -800 , -711 & -600 rimm modules max max max max max t pd propagation delay, all rsl signals -800 2.06 tbd 1.50 tbd 1.25 ns -711 tbd tbd tbd tbd tbd ns -600 2.10 tbd 1.60 tbd 1.25 ns v a /v in attenuation limit -800 25 tbd 16 tbd 12 % -711 tbd tbd tbd tbd tbd % -600 21 tbd 10 tbd 8 % v xf /v in forward crosstalk coefficient (300ps input rise time @ 20%- 80%) -800 8 tbd 4 tbd 2 % -711 tbd tbd tbd tbd tbd % -600 8 tbd 4 tbd 2 % v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%- 80%) -800 2.5 tbd 2.0 tbd 1.5 % -711 tbd tbd tbd tbd tbd % -600 2.5 tbd 2.0 tbd 1.5 % r dc dc resistance limit -800 1.2 tbd 0.8 tbd 0.6 w -711 tbd tbd tbd tbd tbd w -600 1.2 tbd 0.8 tbd 0.6 w
page 8 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary rimm module supply current profile i dd rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb unit no. of 128/144mb a rdrams a. x16/x18 rdram data width. 16 12 8 6 4 rimm module power conditions b b. specifications in this table are maximum guidelines. actual power will depend on individual rdram component specifications, m emory controller and us- age patterns tcycle max max max max max i dd1 one rdram in read, balance in nap mode 2.5ns 550/580 534/580 518/548 510/540 502/532 ma 2.8ns tbd tbd tbd tbd tbd ma 3.3ns tbd tbd tbd tbd tbd ma i dd2 one rdram in read, balance in standby mode, no commands 2.5ns 2065/2095 1645/1675 1225/1255 1015/1045 805/835 ma 2.8ns tbd tbd tbd tbd tbd ma 3.3ns tbd tbd tbd tbd tbd ma i dd3 one rdram in read, balance in active mode, no commands 2.5ns 2965/2995 2305/2335 1645/1675 1315/1345 985/1015 ma 2.8ns tbd tbd tbd tbd tbd ma 3.3ns tbd tbd tbd tbd tbd ma
page 9 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary figure 3: rimm module pcb physical dimensions physical dimensions the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. t he maximum height of the module is 31.75mm[1.25inches]. component area (a side) 133.35 0.15[5.250 0.006] 3.00[0.118] 1.00[0.039] 17.78[0.700] 4.00 0.15 45.00[1.772] 1.00[0.039] 4.00[0.157] 5.68[0.2236] ref. 11.50[0.453] 45.00[1.772] 78.175[3.078] ref. 55.175 0.08[2.172 0.003] dia 2.44 r 2.00 6.35[0.25] 6.35[0.25] 3 1 . 7 5 [ 1 . 2 5 ] 2 9 . 2 1 [ 1 . 1 5 ] 1 7 . 7 8 [ 0 . 7 ] 7 . 4 6 8 [ 0 . 2 9 4 ] 4.50[0.177] a-1 a-92 detail a detail b 120.65[4.75] (b side) component area b-1 b-92 0.85[0.033] capacitor csp 0.75-1.35 [0.030-0.053] 1.27 0.10 [0.050 0.004] 0.80 0.10 0.15 0.10 2.99 0.05 [0.031 0.004] [0.006 0.004] [0.12 0.002] detail a 3.00 0.10 2.00 0.10 detail b [0.12 0.004] [0.079 0.004] 3.99 0.10 [0.16 0.004] r 1.00 [0.157 0.006] 1.00 [0.039]
page 10 rev.0.9 jul. 1999 4/6/8/12/16d rimm tm module with 128mb rdrams kmmr18r84(6/8/c/g)ac1 kmmr16r84(6/8/c/g)ac1 4/6/8/12/16d rimm tm module with 144mb rdrams preliminary table of contents overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 key timing parameters/part numbers . . . . . . . . . . . 1 module pad numbers and signal names . . . . . . . . . 2 module connector pad description . . . . . . . . . . . . . 3-4 rimm module functional diagram . . . . . . . . . . . . . . 5 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . 6 dc recommended electrical conditions . . . . . . . . . 6 ac electrical specifications . . . . . . . . . . . . . . . . . . . . 7 rimm module supply current profile . . . . . . . . . . . . 8 physical dimensions . . . . . . . . . . . . . . . . . . . . . . . . . 9 ? copyright july 1999 samsung electronics. all rights reserved. direct rambus and direct rdram, so-rimm and rimm are trademarks of rambus inc. rambus, rdram, and the rambus logo are registered trademarks of rambus inc. this document contains advanced information that is subject to change by samsung without notice document version 0.9 samsung electronics co., ltd. #24 nongseo-ri, kiheung-eup yongin-city kyunggi-do, korea telephone: 82-331-209-4584 fax: 82-2-760-7990 http://www.samsungsemi.com
|
